TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced a new gate driver IC that is designed to drive high-voltage ...
A ready-to-use reference platform that helps engineers accelerate the development of efficient mid-power inverter systems ...
The Renesas RAJ2930004AGM gate driver IC drives 1200-V IGBTs and SiC MOSFETs for electric vehicle (EV) inverters, while providing 3.75-kV RMS isolation. In addition, the driver IC delivers strong ...
Members can download this article in PDF format. Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to ...
High-frequency link matrix converters and inverters represent a transformative development in power electronics, combining direct AC–AC conversion with high-frequency pulse width modulation (PWM) to ...
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