This technical article gives you information on the advantages of Silicon Carbide Schottky Diodes over Silicon Rectifiers and how Silicon Rectifiers can compete with SiC Diodes. It also explains why ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...

USING TRENCHFET® Gen III silicon, the Si4628DY SkyFET® from Vishay Intertechnology offers a maximum R DS(ON) of 3 mΩ at a 10-V gate drive and 3.8 mΩ at 4.5 V — presented as the industry's lowest ...

STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, has announced a new high-voltage Schottky diode that will help increase the energy ...

The 178-product lineup assembled by ROHM helps contribute to lower power consumption, smaller size, and higher reliability in a wider range of applications. A diode is one of the basic components ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

STMicroelectronics has introduced three radiation-hardened low-voltage rectifier diodes intended for power conversion and ...