MmWave (30-100GHz) and sub-THz (100-300GHz) bands are seen as the future for next-generation RF systems including wireless ...

Within that family of ultrawide bandgap devices, AlN has generated significant attention for many years. Judged by various ...

This increased optical power output enables higher measurement precision and accelerated processing of biological samples, ...

Engineers and researchers who work with diamond for quantum sensors, power electronics or thermal management technologies ...

Researchers say latch-effect could make GaN-based RF power amplifiers quicker, more powerful and more reliable New research ...

The cost of SiC substrates needs to come down. But are we going to hamper these efforts by imposing limits on the thickness ...

Navitas Semiconductor, maker of GaNFast GaN and GeneSiC SiC power semiconductors, has announced a collaboration with NVIDIA ...

Altum RF will show its latest RF and mmWave products and technical expertise at IMS 2025, to be held in San Francisco, US.15 ...

Compound Semiconductor™ is an Angel Business Communications publication.

Infineon, in collaboration with NVIDIA, is developing the next generation of power systems based on a new architecture with ...

At the heart of Innovate Together was the launch of the SiC Open R&D Line. Designed to enable joint SiC innovation between ...

Infineon has announced that it will supply the US EV-maker Rivian with power modules for traction inverters for its R2 mid ...